It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STH65N050DM9-7AG

Name: STMicroelectronics STH65N050DM9-7AG
Brand: STMicroelectronics
SKU: 511-STH65N050DM9-7AG
Price: 7.81 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STH65N050DM9-7AG

Mfr. No:

STH65N050DM9-7AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STH65N050DM9-7AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STH65N050DM9-7AG

In Stock: 796

Stock:: 796 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,81 €	7,81 €
	5,68 €	56,80 €
	4,73 €	473,00 €
	4,21 €	2.105,00 €
Full Reel (Order in multiples of 1000)
	3,76 €	3.760,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	H2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 50 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	266 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	1,540 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STH65N050DM9-7AG Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.