STGYA75H120DF2

STMicroelectronics
511-STGYA75H120DF2
STGYA75H120DF2

Mfr.:

Description:
IGBTs Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l
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Datasheet:
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In Stock: 163

Stock:
163
Can Dispatch Immediately
On Order:
600
Expected 1/8/2027
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,52 € 7,52 €
4,82 € 48,20 €
4,32 € 518,40 €
3,84 € 1.958,40 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
MAX257-3
Through Hole
Single
1.2 kV
2.1 V
- 20 V, 20 V
150 A
750 W
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 75 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 4,430 g
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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