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STGWT30V60DF

STMicroelectronics

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See Product Specifications

Mouser No:

511-STGWT30V60DF

Mfr. No:

STGWT30V60DF

Mfr.:

STMicroelectronics

Description:

IGBTs 600V 30A High Speed Trench Gate IGBT

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STGWT30V60DF Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-3P
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	258 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT30V60DF
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	300
Subcategory:	IGBTs
Unit Weight:	6,756 g

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Attributes selected: 0

Filter Document:

Datasheet

STGWT30V60DF Datasheet (PDF)

EOL

Product Discontinuation Notification (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 493

Stock:: 493 Can Dispatch Immediately

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,27 €	3,27 €
	1,81 €	18,10 €
	1,72 €	172,00 €
	1,61 €	966,00 €
	1,55 €	1.860,00 €
	1,51 €	4.077,00 €
	1,41 €	7.191,00 €

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Mfr. No:

STGW30V60DF

Description:

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