STGW10M65DF2

STMicroelectronics
511-STGW10M65DF2
STGW10M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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Learn more about STMicroelectronics STGW10M65DF2

In Stock: 979

Stock:
979 Can Dispatch Immediately
Quantities greater than 979 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,34 € 2,34 €
1,50 € 15,00 €
1,02 € 102,00 €
0,76 € 456,00 €
0,748 € 897,60 €
0,745 € 2.235,00 €
0,743 € 4.012,20 €
0,741 € 7.558,20 €
25.200 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
20 A
115 W
- 55 C
+ 175 C
STGW10M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 20 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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