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STGP5H60DF

Name: STMicroelectronics STGP5H60DF
Brand: STMicroelectronics
SKU: 511-STGP5H60DF
Price: 1.8 EUR
Availability: InStock

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Mouser No:

511-STGP5H60DF

Mfr. No:

STGP5H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Datasheet:

STGP5H60DF Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGP5H60DF

In Stock: 3.931

Stock:: 3.931

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On Order:: 1.000

Expected 11/9/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,80 €	1,80 €
	0,869 €	8,69 €
	0,775 €	77,50 €
	0,615 €	307,50 €
	0,562 €	562,00 €
	0,531 €	1.062,00 €
	0,501 €	2.505,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	88 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGP5H60DF
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	10 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Datasheet

STGP5H60DF Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.