STGP15M65DF2

STMicroelectronics
511-STGP15M65DF2
STGP15M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 12

Stock:
12 Can Dispatch Immediately
Quantities greater than 12 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,00 € 2,00 €
1,28 € 12,80 €
0,877 € 87,70 €
0,779 € 389,50 €
0,661 € 661,00 €
0,649 € 3.245,00 €
0,647 € 6.470,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
30 A
136 W
- 55 C
+ 175 C
STGP15M65DF2
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 30 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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