STGP10H60DF

STMicroelectronics
511-STGP10H60DF
STGP10H60DF

Mfr.:

Description:
IGBTs Trench gate H series 600V 10A HiSpd
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Datasheet:
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In Stock: 811

Stock:
811 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,99 € 1,99 €
0,972 € 9,72 €
0,869 € 86,90 €
0,734 € 367,00 €
0,634 € 634,00 €
0,586 € 1.172,00 €
0,583 € 2.332,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
20 A
115 W
- 55 C
+ 175 C
STGP10H60DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 2000
Subcategory: IGBTs
Unit Weight: 6 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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