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STF3LN80K5

Name: STMicroelectronics STF3LN80K5
Brand: STMicroelectronics
SKU: 511-STF3LN80K5
Price: 1.92 EUR
Availability: InStock

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Mouser No:

511-STF3LN80K5

Mfr. No:

STF3LN80K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220FP package

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Datasheet:

STF3LN80K5 Datasheet (PDF)

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In Stock: 3.130

Stock:: 3.130 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,92 €	1,92 €
	0,937 €	9,37 €
	0,823 €	82,30 €
	0,659 €	329,50 €
	0,599 €	599,00 €
	0,539 €	1.078,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	2.75 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	2.63 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	20 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	26 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	STF3LN80K5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	6.2 ns
Unit Weight:	2 g

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Datasheet

STF3LN80K5 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.