STF2N95K5

STMicroelectronics
511-STF2N95K5
STF2N95K5

Mfr.:

Description:
MOSFETs N-CH 950V 4.2Ohm typ 2A Zener-protected
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
- 55 C
+ 150 C
TO-220-3
STF2N95K5
Tube
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Fall Time: 32.5 ns
Id - Continuous Drain Current: 2 A
Mounting Style: Through Hole
Number of Channels: 1 Channel
Pd - Power Dissipation: 20 W
Product Type: MOSFETs
Qg - Gate Charge: 10 nC
Rds On - Drain-Source Resistance: 4.2 Ohms
Rise Time: 13.5 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: Si
Tradename: SuperMESH
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 20.5 ns
Typical Turn-On Delay Time: 8.5 ns
Vds - Drain-Source Breakdown Voltage: 950 V
Vgs - Gate-Source Voltage: - 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

In Stock: 1.554

Stock:
1.554 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,92 € 1,92 €
0,929 € 9,29 €
0,821 € 82,10 €
0,66 € 330,00 €
0,617 € 617,00 €
0,548 € 1.096,00 €
0,535 € 3.210,00 €

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