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STB45N50DM2AG

Name: STMicroelectronics STB45N50DM2AG
Brand: STMicroelectronics
SKU: 511-STB45N50DM2AG
Price: 6.4 EUR
Availability: InStock

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Mouser No:

511-STB45N50DM2AG

Mfr. No:

STB45N50DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in

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Datasheet:

STB45N50DM2AG Datasheet (PDF)

ECAD Model:

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In Stock: 1.419

Stock:: 1.419 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,40 €	6,40 €
	4,56 €	45,60 €
	3,43 €	343,00 €
	3,33 €	1.665,00 €
Full Reel (Order in multiples of 1000)
	3,10 €	3.100,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	84 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9.8 ns
Product Type:	MOSFETs
Rise Time:	9.4 ns
Series:	STB45N50DM2AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	73.5 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	4 g

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Datasheet

STB45N50DM2AG Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.