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STB25N018M9

Name: STMicroelectronics STB25N018M9
Brand: STMicroelectronics
SKU: 511-STB25N018M9
Price: 5.27 EUR
Availability: InStock

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Mouser No:

511-STB25N018M9

Mfr. No:

STB25N018M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 250 V, 14 mOhm typ., 54 A MDmesh M9 Power MOSFET in a D2PAK package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STB25N018M9 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STB25N018M9

In Stock: 115

Stock:: 115

Can Dispatch Immediately

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On Order:: 1.000
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,27 €	5,27 €
	3,46 €	34,60 €
	2,55 €	255,00 €
	2,30 €	1.150,00 €
Full Reel (Order in multiples of 1000)
	1,94 €	1.940,00 €
	1,90 €	3.800,00 €
	1,82 €	9.100,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	31 ns
Product Type:	MOSFETs
Rise Time:	3.6 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	1,444 g

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Datasheet

STB25N018M9 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
USHTS:: 8541290055
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.