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STB120N4F6

Name: STMicroelectronics STB120N4F6
Brand: STMicroelectronics
SKU: 511-STB120N4F6
Price: 2.38 EUR
Availability: InStock

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Mouser No:

511-STB120N4F6

Mfr. No:

STB120N4F6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

Complete Your Design

Datasheet:

STB120N4F6 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STB120N4F6

In Stock: 295

Stock:: 295

Can Dispatch Immediately

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On Order:: 1.000

Expected 6/15/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,38 €	2,38 €
	1,54 €	15,40 €
	1,06 €	106,00 €
	0,845 €	422,50 €
Full Reel (Order in multiples of 1000)
	0,778 €	778,00 €
	0,736 €	1.472,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	STB120N4F6
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	4 g

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Datasheet

STB120N4F6 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

AEC-Q101 Qualified STripFET Power MOSFETs

STMicroelectronics AEC-Q101 Qualified STripFET Power MOSFETs utilize ST's proprietary trench-based low voltage technology, achieving extremely low conduction losses. These STMicroelectronics power MOSFETs minimize the energy normally lost in electrical drives, leading to greater efficiency and making them suitable for many applications. Housed in industry-standard TO-252 and TO-263 SMD packages with R_DS(on) ranging from 3mΩ to 12.5mΩ, these devices perform well in most low-voltage automotive applications. This product range includes both standard and logic-level thresholds.