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SCTW40N120G2V

Name: STMicroelectronics SCTW40N120G2V
Brand: STMicroelectronics
SKU: 511-SCTW40N120G2V
Price: 13.26 EUR
Availability: InStock

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Mouser No:

511-SCTW40N120G2V

Mfr. No:

SCTW40N120G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTW40N120G2V Datasheet (PDF)

ECAD Model:

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In Stock: 354

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	13,26 €	13,26 €
	9,46 €	94,60 €
	8,77 €	877,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.9 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Fall Time:	7.9 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	10.3 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13.4 ns

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Datasheet

SCTW40N120G2V Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.