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Mfr.	Mfr. No:	Qty	Ext Total

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SCTW40N120G2V

STMicroelectronics

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See Product Specifications

Mouser No:

511-SCTW40N120G2V

Mfr. No:

SCTW40N120G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTW40N120G2V Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.9 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Fall Time:	7.9 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	10.3 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13.4 ns

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Filter Document:

Datasheet

SCTW40N120G2V Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 354

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,59 €	11,59 €
	8,79 €	87,90 €
	7,97 €	797,00 €