SCT20N120H

Name: STMicroelectronics SCT20N120H
Brand: STMicroelectronics
SKU: 511-SCT20N120H
Price: 9.93 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-SCT20N120H

Mfr. No:

SCT20N120H

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCT20N120H Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	H2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	239 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	45 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	175 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Compliance:	Done
Configuration:	Single
Fall Time:	17 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	1,380 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCT20N120H Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

Automotive-Grade Silicon Carbide Power MOSFETs

Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.

Learn More

650V 3rd Gen SiC MOSFETs

Features low R_DS(on) per area, even at high temperatures, and excellent switching performance.

Learn More

Silicon Carbide Power MOSFETs

Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.

Learn More

HB/HB2 Series Insulated-Gate Bipolar Transistors

Combine a very low saturation voltage with a minimal collector current turn-off tail.

Learn More

View All Newest Products from STMicroelectronics

In Stock: 359

Stock:: 359 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 359 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	9,93 €	9,93 €
	7,18 €	71,80 €
	5,99 €	599,00 €
	5,33 €	2.665,00 €
Full Reel (Order in multiples of 1000)
	5,05 €	5.050,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

SCT20N120H

Mfr.: STMicroelectronics

Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package Complete Your Design

Specifications

Documents (7)

Datasheet

EOL

PCN

Environmental Documents

Product & Trade Compliance

Customers Also Purchased

FEATURED PRODUCTS STMICROELECTRONICS

In Stock: 359

Pricing (EUR)

QuickView

An unexpected error has occurred.

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package

Complete Your Design

FEATURED PRODUCTS

STMICROELECTRONICS