SCT020HU120G3AG

STMicroelectronics
511-SCT020HU120G3AG
SCT020HU120G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about STMicroelectronics SCT020HU120G3AG

In Stock: 251

Stock:
251
Can Dispatch Immediately
On Order:
600
Expected 9/25/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 600)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
19,57 € 19,57 €
14,62 € 146,20 €
12,64 € 1.264,00 €
Full Reel (Order in multiples of 600)
11,19 € 6.714,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
1.2 kV
100 A
28 mOhms
- 10 V, + 22 V
3 V
121 nC
- 55 C
555 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Fall Time: 34 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 57 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 101 ns
Typical Turn-On Delay Time: 54 ns
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Italy
The country is subject to change at the time of shipment.

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics  Automotive-Grade Silicon Carbide Power MOSFETs are  developed using ST's  advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices  feature low on-resistance per unit area and very good switching  performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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