TP70H130G4PLSG-TR

Renesas Electronics
227-TP70H130G4PLSGTR
TP70H130G4PLSG-TR

Mfr.:

Description:
GaN FETs 700V, 130mohm GaN FET in 8x8 PQFN PP

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 3000   Multiples: 3000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
1,11 € 3.330,00 €
1,07 € 6.420,00 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PQFN-3
N-Channel
1 Channel
700 V
16 A
163 mOhms
20 V
4.8 V
10.7 nC
- 55 C
+ 150 C
69.4 W
Enhancement
SuperGaN
Brand: Renesas Electronics
Configuration: Single
Fall Time: 14.7 ns
Packaging: Reel
Product: GaN FETs
Product Type: GaN FETs
Rise Time: 4.3 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Type: SuperGaN
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 36.2 ns
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Attributes selected: 0

Datasheet

Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

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