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QPA2213

Name: Qorvo QPA2213
Brand: Qorvo
SKU: 772-QPA2213
Price: 238.69 EUR
Availability: InStock

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Mouser No:

772-QPA2213

Mfr. No:

QPA2213

Mfr.:

Qorvo

Description:

RF Amplifier 2-20 GHz, 2 W GaN Amp

Datasheet:

QPA2213 Datasheet (PDF)

ECAD Model:

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Learn more about Qorvo QPA2213

In Stock: 180

Stock:: 180 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	238,69 €	238,69 €
	204,33 €	2.043,30 €
	195,74 €	5.872,20 €
100	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	2 GHz to 20 GHz
Operating Supply Voltage:	18 V
Operating Supply Current:	330 mA
Gain:	21.4 dB
NF - Noise Figure:	5.3 dB
Type:	Driver Amplifiers
Mounting Style:	SMD/SMT
Technology:	GaN SiC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	QPA2213
Packaging:	Bag
Brand:	Qorvo
Development Kit:	QPA2213EVB1
Input Return Loss:	29 dB
Moisture Sensitive:	Yes
Number of Channels:	1 Channel
Pd - Power Dissipation:	13.7 W
Product Type:	RF Amplifier
Factory Pack Quantity:	10
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	20 GHz
Unit Weight:	38,082 g

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Datasheet

QPA2213 Datasheet (PDF)

Models

QPA2213 Symbol & Footprint by SnapMagic

PCN

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TARIC:: 8542330000
CNHTS:: 8542339000
CAHTS:: 8542330000
USHTS:: 8542330001
MXHTS:: 8542330299
ECCN:: EAR99

QPA2213 & QPA2213D Wideband Driver Amplifiers

Qorvo QPA2213 and QPA2213D are wideband driver amplifiers that support various operating systems. These amplifiers are ideal for both commercial and military wideband or narrowband systems. Qorvo QPA2213 & QPA2213D Wideband Driver Amplifiers have a frequency range of 2GHz to 20GHz. Its thermal properties can support a range of bias voltages and have DC-blocking capacitors on both RF ports, which are matched to 50Ω. QPA2213 is a packaged wideband driver amplifier. QPA2213D is a wideband driver Monolithic Microwave Integrated Circuit (MMIC) and the DIE version in the series. Both amplifiers are fabricated on its 0.15µm Gallium Nitride (GaN) on the SiC process (QGaN15). These amplifiers also provide a 2W saturated output power and 16dB signal gain while achieving more than 23% power-added efficiency.