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BUK9Q50-100LJ

Name: Nexperia BUK9Q50-100LJ
Brand: Nexperia
SKU: 771-BUK9Q50-100LJ
Price: 0.69 EUR
Availability: InStock

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Mouser No:

771-BUK9Q50-100LJ

Mfr. No:

BUK9Q50-100LJ

Mfr.:

Nexperia

Description:

MOSFETs BUK9Q50-100L/SOT8002/MLPAK33

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BUK9Q50-100LJ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia BUK9Q50-100LJ

In Stock: 400

Stock:: 400 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,697 €	0,70 €
	0,433 €	4,33 €
	0,415 €	20,75 €
	0,281 €	28,10 €
	0,215 €	107,50 €
	0,194 €	194,00 €
Full Reel (Order in multiples of 3000)
	0,165 €	495,00 €
	0,152 €	912,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Nexperia
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	934670298118 934670000000

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Datasheet

BUK9Q50-100LJ Datasheet (PDF)

TARIC:: 8541290000

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.