MT46V64M8CY-5B:J

Micron
340-122563-TRAY
MT46V64M8CY-5B:J

Mfr.:

Description:
DRAM DDR 512Mbit 8 60/108FBGA 1 CT

Lifecycle:
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Datasheet:
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Learn more about Micron MT46V64M8CY-5B:J

In Stock: 1.368

Stock:
1.368 Can Dispatch Immediately
Factory Lead Time:
53 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1368 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 100
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,35 € 10,35 €

Product Attribute Attribute Value Select Attribute
Micron Technology
Product Category: DRAM
RoHS:  
SDRAM - DDR
512 Mbit
8 bit
200 MHz
FBGA-60
64 M x 8
700 ps
2.5 V
2.7 V
0 C
+ 70 C
MT46V
Tray
Brand: Micron
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 1368
Subcategory: Memory & Data Storage
Supply Current - Max: 85 mA
Unit Weight: 4,605 g
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Attributes selected: 0 

                        
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Datasheet

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Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320028
MXHTS:
8542320201
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

DDR SDRAM

Micron DDR SDRAM is revolutionary and pioneering technology that allows applications to transfer data on the rising and falling edges of a clock signal. This doubles bandwidth and improves performance over SDR SDRAM. To achieve this functionality, Micron uses a 2n-prefetch architecture where the internal data bus is double the size of the external data bus, so data capture can happen two times each clock cycle.

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