MSC050SDA120BCT

Microchip Technology
494-MSC050SDA120BCT
MSC050SDA120BCT

Mfr.:

Description:
SiC Schottky Diodes SIC SBD 1200 V 50 A TO-247

ECAD Model:
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In Stock: 76

Stock:
76 Can Dispatch Immediately
Factory Lead Time:
5 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
28,22 € 28,22 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-3
Dual
109 A
1.2 kV
1.5 V
290 A
- 55 C
+ 175 C
Tube
Brand: Microchip Technology
Pd - Power Dissipation: 429 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
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Compliance Codes
TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
BRHTS:
85411099
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.