APT35GT120JU2

Microchip Technology
494-APT35GT120JU2
APT35GT120JU2

Mfr.:

Description:
IGBT Modules PM-IGBT-TFS-SOT227
View in Development Tools Selector

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 41   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
19,15 € 785,15 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: IGBT Modules
RoHS:  
IGBT Modules
SMD/SMT
Tube
Brand: Microchip Technology
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Configuration: Single
Continuous Collector Current at 25 C: 55 A
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Package/Case: ISOTOP-4
Pd - Power Dissipation: 260 W
Product Type: IGBT Modules
Factory Pack Quantity: 1
Subcategory: IGBTs
Technology: Si
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Attributes selected: 0

Datasheet

DTS

PCN

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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