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LSIC2SD120N80PA

Name: Littelfuse LSIC2SD120N80PA
Brand: Littelfuse
SKU: 576-LSIC2SD120N80PA
Price: 27.48 EUR
Availability: InStock

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Mouser No:

576-LSIC2SD120N80PA

Mfr. No:

LSIC2SD120N80PA

Mfr.:

Littelfuse

Description:

SiC Schottky Diodes RECT 1.2KV 80A SM SCHOTTKY

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

LSIC2SD120N80PA Datasheet

ECAD Model:

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More Information

Learn more about Littelfuse LSIC2SD120N80PA

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Littelfuse
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Screw Mount
Package/Case:	SOT-227B
Configuration:	Dual Series
If - Forward Current:	80 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.8 V
Ifsm - Forward Surge Current:	300 A
Ir - Reverse Current:	100 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	LSIC2SD
Packaging:	Tube
Brand:	Littelfuse
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	100
Subcategory:	Diodes & Rectifiers

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Datasheet

LSIC2SD120N80PA Datasheet

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Compliance Codes

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

LSIC2SD GEN2 SiC Schottky Diodes

Littelfuse LSIC2SD GEN2 Silicon Carbide (SiC) Schottky Diodes provide improved efficiency, reliability, and thermal management in various applications. The diodes have an operating junction temperature of +175°C maximum. The positive temperature coefficient of the diodes supports safe operation and ease of paralleling. Other features of the Littelfuse LSIC2SD GEN2 SiC Schottky Diodes include high-surge capability and negligible reverse recovery current. The switching behavior of the diodes is extremely fast and temperature-independent. Compared to Si bipolar diodes, these diodes provide dramatically reduced switching losses. LSIC2SD GEN2 SiC Schottky Diodes are ideal for EV charging stations, solar inverters, switch-mode power supplies, and more. These diodes are available in a variety of packages and voltage/current ratings, including 650V (6A to 40A) and 1200V (5A to 40A).