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IKB40N65EF5ATMA1

Name: Infineon IKB40N65EF5ATMA1
Brand: Infineon Technologies
SKU: 726-IKB40N65EF5ATMA1
Price: 5.03 EUR
Availability: InStock

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Mouser No:

726-IKB40N65EF5ATMA1

Mfr. No:

IKB40N65EF5ATMA1

Mfr.:

Infineon Technologies

Description:

IGBTs INDUSTRY

Datasheet:

IKB40N65EF5ATMA1 Datasheet (PDF)

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In Stock: 1.324

Stock:: 1.324 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,03 €	5,03 €
	3,29 €	32,90 €
	2,43 €	243,00 €
	2,16 €	1.080,00 €
Full Reel (Order in multiples of 1000)
	1,92 €	1.920,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	D2PAK-3 (TO-263-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	74 A
Pd - Power Dissipation:	250 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT5
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	74 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKB40N65EF5 SP001509612
Unit Weight:	1,561 g

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Datasheet

IKB40N65EF5ATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs

Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages, and high voltage DC-DC topologies commonly found in applications like uninterruptible power supplies (UPS), inverter welding machines, and switch-mode power supplies. The 650V TRENCHSTOP 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP 5 H5 family.