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IXYH100N65C5

Name: IXYS IXYH100N65C5
Brand: IXYS
SKU: 747-IXYH100N65C5
Price: 10.78 EUR
Availability: InStock

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Mouser No:

747-IXYH100N65C5

Mfr. No:

IXYH100N65C5

Mfr.:

IXYS

Description:

IGBTs 650V, 100A, XPT Gen5 C5 IGBT in TO-247AD

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXYH100N65C5 Datasheet (PDF)

ECAD Model:

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Learn more about IXYS IXYH100N65C5

In Stock: 78

Stock:: 78

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On Order:: 300

Expected 8/10/2026
Factory Lead Time:: 28

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,78 €	10,78 €
	8,77 €	87,70 €
	7,30 €	876,00 €
	6,51 €	3.320,10 €
	5,73 €	5.844,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.68 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	230 A
Pd - Power Dissipation:	750 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	230 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYH100N65C5 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

AC/DC Power Supply

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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Gen5 XPT IGBTs

IXYS Gen5 XPT IGBTs offer a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge. These transistors feature a low thermal resistance that simplifies thermal-related design issues. Gen5 IGBTs are available in three classes. Class A transistors are for low-speed devices and optimized for applications that require switching frequencies in the 0 to 5kHz range, while Class B transistors are for medium-speed devices and optimized for applications that require a frequency range of 5kHz to 30kHz. Finally, the Class C transistors are designed for high-speed devices and are suitable for applications requiring switching frequencies in the range of 20kHz to 60kHz. Applications for IXYS Gen5 XPT IGBTs include power inverters, PFC circuits, lamp ballasts, battery chargers, and welding machines.