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Mfr.	Mfr. No:	Qty	Ext Total

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IS43LD16128B-18BL

ISSI

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See Product Specifications

Mouser No:

870-IS43LD16128B18BL

Mfr. No:

IS43LD16128B-18BL

Mfr.:

ISSI

Description:

DRAM 2G, 1.2/1.8V, LPDDR2, 128Mx16, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS

Lifecycle:

Obsolete

Datasheet:

IS43LD16128B-18BL Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Type:	SDRAM Mobile - LPDDR2
Memory Size:	2 Gbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	533 MHz
Package/Case:	BGA-134
Organisation:	128 M x 16
Supply Voltage - Min:	1.14 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 85 C
Series:	IS43LD16128B
Packaging:	Bulk
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	171
Subcategory:	Memory & Data Storage
Supply Current - Max:	50 mA

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Datasheet

IS43LD16128B-18BL Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542320000
USHTS:: 8542320036
JPHTS:: 854232021
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

ISSI

LPDDR4 & LPDDR4X Mobile SDRAM

Low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities, ideal for mobile applications.

High-speed DRAM devices internally organized with an eight-bank setup.

Deliver high-speed data transfer rates up to 2133Mbps.

Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Mobile LPDDR2 SDRAM

High-speed operation, using a double data rate architecture, a prefetch architecture.

Availability

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