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VN10LPSTZ

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See Product Specifications

Mouser No:

621-VN10LPSTZ

Mfr. No:

VN10LPSTZ

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 41V~60V EP3SC BULK 4K

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

VN10LPSTZ Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-92-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	270 mA
Rds On - Drain-Source Resistance:	7.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	625 mW
Channel Mode:	Enhancement
Packaging:	Bulk
Brand:	Diodes Incorporated
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	453,600 mg

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Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.