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IPW60R024CFD7XKSA1

Name: Infineon IPW60R024CFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPW60R024CFD7XKS
Price: 11.52 EUR
Availability: InStock

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Mouser No:

726-IPW60R024CFD7XKS

Mfr. No:

IPW60R024CFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Datasheet:

IPW60R024CFD7XKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPW60R024CFD7XKSA1

In Stock: 178

Stock:: 178

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On Order:: 240

Expected 2/16/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,52 €	11,52 €
	6,92 €	173,00 €
	6,02 €	602,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	183 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Product Type:	MOSFETs
Series:	IPW60R024CFD7
Factory Pack Quantity:	240
Subcategory:	Transistors
Part # Aliases:	IPW60R024CFD7 SP002621050
Unit Weight:	6 g

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Datasheet

IPW60R024CFD7XKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.